Epitaxial SrTiO(3) tunnel barriers on Pt/MgO substrates
SCIE
SCOPUS
- Title
- Epitaxial SrTiO(3) tunnel barriers on Pt/MgO substrates
- Authors
- Son, J; Cagnon, J; Boesch, DS; Stemmer, S
- Date Issued
- 2008-06
- Publisher
- The Japanese Society of Applied Physics
- Abstract
- Tunnel junction devices employing epitaxial, (001)-oriented SrTiO(3) barriers with thicknesses between 4 and 5nm were fabricated by sputtering on (001) Pt/MgO substrates. The quality of the Pt/SrTiO(3) interface was characterized by transmission electron microscopy and the current transport studied as a function of temperature and bias field. At low voltages the junctions showed excellent insulting properties and temperature dependent, non-linear current-voltage characteristics. If junctions were biased to high fields (>1.25 MV/cm) current hysteresis was observed. The hysteresis is shown to be due to time-dependent tunnel barrier properties at high fields. (C) 2008 The Japan Society of Applied Physics.
- Keywords
- THIN-FILM; SPIN-POLARIZATION; JUNCTIONS; FERROELECTRICITY; TEMPERATURE; DEPENDENCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15533
- DOI
- 10.1143/APEX.1.061603
- ISSN
- 1882-0778
- Article Type
- Article
- Citation
- Applied Physics Express, vol. 1, no. 6, 2008-06
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- There are no files associated with this item.
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