Self-selective Characteristics of Nanoscale VOx Devices for High-density ReRAM Applications
SCIE
SCOPUS
- Title
- Self-selective Characteristics of Nanoscale VOx Devices for High-density ReRAM Applications
- Authors
- Son, M; Liu, X; Sadaf, SM; Lee, D; Park, S; Lee, W; Kim, S; Park, J; Shin, J; Jung, S; Ham, MH; Hwang, H
- Date Issued
- 2012-05
- Publisher
- Institute of Electrical and Electronics Engineers Inc..
- Abstract
- We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WOx/VOx interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.
- Keywords
- Resistive random access memory (ReRAM); selection property; vanadium oxide (VOx) nanoscale device; RESISTIVE SWITCHING MEMORIES; METAL-INSULATOR-TRANSITION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15811
- DOI
- 10.1109/LED.2012.2188989
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 5, page. 718 - 720, 2012-05
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- There are no files associated with this item.
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