Article
Cited 17 time in 
Cited 14 time in 
Cited 14 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Daeseok Lee | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Jung, S | - |
| dc.contributor.author | Choi, G | - |
| dc.contributor.author | Lee, J | - |
| dc.contributor.author | Kim, S | - |
| dc.contributor.author | Woo, J | - |
| dc.contributor.author | Siddik, M | - |
| dc.contributor.author | Cha, E | - |
| dc.contributor.author | Hwang, H | - |
| dc.date.accessioned | 2016-03-31T08:41:51Z | - |
| dc.date.available | 2016-03-31T08:41:51Z | - |
| dc.date.created | 2013-03-08 | - |
| dc.date.issued | 2012-04 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.other | 2012-OAK-0000026968 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15847 | - |
| dc.description.abstract | For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfOx-based ReRAM with a TiOx-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEEE Electron Devices Society | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.subject | Complementary resistive switches (CRSs) | - |
| dc.subject | cross-point array | - |
| dc.subject | nonvolatile memory | - |
| dc.subject | resistive memory | - |
| dc.subject | RRAM | - |
| dc.subject | MEMORIES | - |
| dc.title | Operation Voltage Control in Complementary Resistive Switches Using Heterodevice | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1109/LED.2012.2186113 | - |
| dc.author.google | Lee, D | - |
| dc.author.google | Park, J | - |
| dc.author.google | Jung, S | - |
| dc.author.google | Choi, G | - |
| dc.author.google | Lee, J | - |
| dc.author.google | Kim, S | - |
| dc.author.google | Woo, J | - |
| dc.author.google | Siddik, M | - |
| dc.author.google | Cha, E | - |
| dc.author.google | Hwang, H | - |
| dc.relation.volume | 33 | - |
| dc.relation.issue | 4 | - |
| dc.relation.startpage | 600 | - |
| dc.relation.lastpage | 602 | - |
| dc.contributor.id | 10079928 | - |
| dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.4, pp.600 - 602 | - |
| dc.identifier.wosid | 000302232900045 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 602 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 600 | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 33 | - |
| dc.contributor.affiliatedAuthor | Hwang, H | - |
| dc.identifier.scopusid | 2-s2.0-84862828865 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 13 | - |
| dc.description.scptc | 12 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | Complementary resistive switches (CRSs) | - |
| dc.subject.keywordAuthor | cross-point array | - |
| dc.subject.keywordAuthor | nonvolatile memory | - |
| dc.subject.keywordAuthor | resistive memory | - |
| dc.subject.keywordAuthor | RRAM | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg