Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
SCIE
SCOPUS
- Title
- Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
- Authors
- Daeseok Lee; Park, J; Jung, S; Choi, G; Lee, J; Kim, S; Woo, J; Siddik, M; Cha, E; Hwang, H
- Date Issued
- 2012-04
- Publisher
- IEEE Electron Devices Society
- Abstract
- For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfOx-based ReRAM with a TiOx-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.
- Keywords
- Complementary resistive switches (CRSs); cross-point array; nonvolatile memory; resistive memory; RRAM; MEMORIES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15847
- DOI
- 10.1109/LED.2012.2186113
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 4, page. 600 - 602, 2012-04
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- There are no files associated with this item.
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