DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, D | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Kim, C | - |
dc.contributor.author | Oh, T | - |
dc.contributor.author | Kang, B | - |
dc.date.accessioned | 2016-03-31T08:46:18Z | - |
dc.date.available | 2016-03-31T08:46:18Z | - |
dc.date.created | 2013-02-28 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2012-OAK-0000026611 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16013 | - |
dc.description.abstract | The effect of La2O3 capping layer thickness on the hot-carrier degradation of n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with high-k/metal gate stacks is investigated. The hot-carrier degradation is monitored by measuring the threshold voltage V-th, transconductance g(m), and subthreshold slope SS. As the thickness of the La2O3 layer increases, V-th degradation is enhanced regardless of whether the La2O3 layer is deposited above or below the HfSiO layer. The generation of interface traps induced by hot-carrier stress is intensified with an increase in the bottom capping layer thickness. On the other hand, the generation of oxide traps induced by hot-carrier stress is intensified with an increase in the top capping layer thickness. (C) 2012 The Japan Society of Applied Physics | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | The Japan Society of Applied Physics | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.subject | DIELECTRIC STACKS | - |
dc.subject | ISSUES | - |
dc.subject | HFSION | - |
dc.subject | MODEL | - |
dc.subject | HFO2 | - |
dc.title | Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1143/JJAP.51.02BC10 | - |
dc.author.google | Kim, D | - |
dc.author.google | Lee, S | - |
dc.author.google | Kim, C | - |
dc.author.google | Oh, T | - |
dc.author.google | Kang, B | - |
dc.relation.volume | 51 | - |
dc.relation.issue | 2 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | Japanese Journal of Applied Physics | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.51, no.2 | - |
dc.identifier.wosid | 000303481400017 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 2 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Kang, B | - |
dc.identifier.scopusid | 2-s2.0-84863131120 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | HFSION | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | HFO2 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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