Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
SCIE
SCOPUS
- Title
- Effect of La2O3 Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
- Authors
- Kim, D; Lee, S; Kim, C; Oh, T; Kang, B
- Date Issued
- 2012-02
- Publisher
- The Japan Society of Applied Physics
- Abstract
- The effect of La2O3 capping layer thickness on the hot-carrier degradation of n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with high-k/metal gate stacks is investigated. The hot-carrier degradation is monitored by measuring the threshold voltage V-th, transconductance g(m), and subthreshold slope SS. As the thickness of the La2O3 layer increases, V-th degradation is enhanced regardless of whether the La2O3 layer is deposited above or below the HfSiO layer. The generation of interface traps induced by hot-carrier stress is intensified with an increase in the bottom capping layer thickness. On the other hand, the generation of oxide traps induced by hot-carrier stress is intensified with an increase in the top capping layer thickness. (C) 2012 The Japan Society of Applied Physics
- Keywords
- DIELECTRIC STACKS; ISSUES; HFSION; MODEL; HFO2
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16013
- DOI
- 10.1143/JJAP.51.02BC10
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- Japanese Journal of Applied Physics, vol. 51, no. 2, 2012-02
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- There are no files associated with this item.
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