DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, K | - |
dc.date.accessioned | 2016-03-31T12:33:03Z | - |
dc.date.available | 2016-03-31T12:33:03Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2004-03-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.other | 2004-OAK-0000004113 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18028 | - |
dc.description.abstract | Hafnium silicate [(HfO2)(X)(SiO2)(1-X)] films were deposited by metalorganic chemical vapor deposition using a new combination of precursors: tetrakis-diethylamido-hafnium [Hf(NEt2)(4)] and tetra-n-butyl-orthosilicate [Si((OBu)-Bu-n)(4)]. An atomically flat interface of silicate/silicon was observed with no interfacial silicon oxide layers. The impurity concentrations in grown films were less than 0.1 at% (below detection limits). Hafnium silicate films were amorphous up to 800degreesC. Above 900degreesC, phase separation of the films occurred into crystalline HfO2 and amorphous Si-rich silicate phases. Dielectric constant (k) of the Hf-silicate films was about 8. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.1 V. (C) 2003 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.subject | metallorganic chemical vapor deposition | - |
dc.subject | oxides | - |
dc.subject | dielectric materials | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | SI | - |
dc.title | Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2003.12.009 | - |
dc.author.google | Kim, J | - |
dc.author.google | Yong, K | - |
dc.relation.volume | 263 | - |
dc.relation.issue | 1-4 | - |
dc.relation.startpage | 442 | - |
dc.relation.lastpage | 446 | - |
dc.contributor.id | 10131864 | - |
dc.relation.journal | JOURNAL OF CRYSTAL GROWTH | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.263, no.1-4, pp.442 - 446 | - |
dc.identifier.wosid | 000220184400074 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 446 | - |
dc.citation.number | 1-4 | - |
dc.citation.startPage | 442 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 263 | - |
dc.contributor.affiliatedAuthor | Yong, K | - |
dc.identifier.scopusid | 2-s2.0-1242286451 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 33 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | metallorganic chemical vapor deposition | - |
dc.subject.keywordAuthor | oxides | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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