Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors
SCIE
SCOPUS
- Title
- Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors
- Authors
- Kim, J; Yong, K
- Date Issued
- 2004-03-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Hafnium silicate [(HfO2)(X)(SiO2)(1-X)] films were deposited by metalorganic chemical vapor deposition using a new combination of precursors: tetrakis-diethylamido-hafnium [Hf(NEt2)(4)] and tetra-n-butyl-orthosilicate [Si((OBu)-Bu-n)(4)]. An atomically flat interface of silicate/silicon was observed with no interfacial silicon oxide layers. The impurity concentrations in grown films were less than 0.1 at% (below detection limits). Hafnium silicate films were amorphous up to 800degreesC. Above 900degreesC, phase separation of the films occurred into crystalline HfO2 and amorphous Si-rich silicate phases. Dielectric constant (k) of the Hf-silicate films was about 8. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.1 V. (C) 2003 Elsevier B.V. All rights reserved.
- Keywords
- metallorganic chemical vapor deposition; oxides; dielectric materials; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; ELECTRICAL-PROPERTIES; SI
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18028
- DOI
- 10.1016/j.jcrysgro.2003.12.009
- ISSN
- 0022-0248
- Article Type
- Article
- Citation
- JOURNAL OF CRYSTAL GROWTH, vol. 263, no. 1-4, page. 442 - 446, 2004-03-01
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