DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, SC | - |
dc.contributor.author | Hang, SY | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Moon, JH | - |
dc.contributor.author | Lee, BT | - |
dc.date.accessioned | 2016-03-31T12:35:15Z | - |
dc.date.available | 2016-03-31T12:35:15Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-02 | - |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.other | 2004-OAK-0000004060 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18066 | - |
dc.description.abstract | Inductively coupled plasma reactive ion etching (ICP-RIE) of SiC single crystals using SF6-based gas mixtures was investigated. Mesas with smooth surfaces with vertical sidewalls were obtained, with an etch rate of about 360 nm/min, roughness of about 0.8 nm, and verticality of 85 at optimum conditions. Efforts to increase the etch rate by increasing bias power resulted in a trenching effect. Sloped sidewalls (about 50) could be obtained by performing RIE (without ICP power) with a photoresist or SiO2 etch mask. Results of various surface characterizations and IN measurements using an Au Schottky barrier diodes indicated little contamination and/or damage on the etched SiC surfaces. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.relation.isPartOf | METALS AND MATERIALS INTERNATIONAL | - |
dc.subject | RIE | - |
dc.subject | ICP | - |
dc.subject | SiC | - |
dc.subject | SF6 | - |
dc.subject | SILICON-CARBIDE | - |
dc.title | A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/BF03027370 | - |
dc.author.google | Ahn, SC | - |
dc.author.google | Hang, SY | - |
dc.author.google | Lee, JL | - |
dc.author.google | Moon, JH | - |
dc.author.google | Lee, BT | - |
dc.relation.volume | 10 | - |
dc.relation.issue | 1 | - |
dc.relation.startpage | 103 | - |
dc.relation.lastpage | 106 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | METALS AND MATERIALS INTERNATIONAL | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCIE | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | METALS AND MATERIALS INTERNATIONAL, v.10, no.1, pp.103 - 106 | - |
dc.identifier.wosid | 000189135100015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 106 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 103 | - |
dc.citation.title | METALS AND MATERIALS INTERNATIONAL | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-11144349518 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | RIE | - |
dc.subject.keywordAuthor | ICP | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | SF6 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
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