A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures
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- Title
- A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures
- Authors
- Ahn, SC; Hang, SY; Lee, JL; Moon, JH; Lee, BT
- Date Issued
- 2004-02
- Publisher
- KOREAN INST METALS MATERIALS
- Abstract
- Inductively coupled plasma reactive ion etching (ICP-RIE) of SiC single crystals using SF6-based gas mixtures was investigated. Mesas with smooth surfaces with vertical sidewalls were obtained, with an etch rate of about 360 nm/min, roughness of about 0.8 nm, and verticality of 85 at optimum conditions. Efforts to increase the etch rate by increasing bias power resulted in a trenching effect. Sloped sidewalls (about 50) could be obtained by performing RIE (without ICP power) with a photoresist or SiO2 etch mask. Results of various surface characterizations and IN measurements using an Au Schottky barrier diodes indicated little contamination and/or damage on the etched SiC surfaces.
- Keywords
- RIE; ICP; SiC; SF6; SILICON-CARBIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18066
- DOI
- 10.1007/BF03027370
- ISSN
- 1598-9623
- Article Type
- Article
- Citation
- METALS AND MATERIALS INTERNATIONAL, vol. 10, no. 1, page. 103 - 106, 2004-02
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