Temperature programmed desorption study of Zr-diethylamido precursor for ZrO2CVD

Abstract

Desorption kinetics of tetrakis(diethylamido)zirconium (TDEAZr, Zr(N(C2H5)(2))(4)) from Si(1 0 0) were studied by temperature programmed desorption (TPD) and Auger electron spectroscopy (AES). A TDEAZr desorption peak from condensed multi-layers was observed at 170K for high exposures. Partial decomposition of monolayer TDEAZr proceeded on Si(1 0 0). Un-reacted TDEAZr desorbed molecularly at 320 K. Partially decomposed Zr-diethylamido desorbed at 430 K. AES results indicated that carbon and nitrogen remained on Si(1 0 0) after TPD experiments through the decomposition of diethylamido ligands. (C) 2003 Elsevier Science B.V. All rights reserved.