DC Field | Value | Language |
---|---|---|
dc.contributor.author | Youn, RH | - |
dc.contributor.author | Kumar, V | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Schwindt, R | - |
dc.contributor.author | Chang, WJ | - |
dc.contributor.author | Hong, JY | - |
dc.contributor.author | Jeon, CM | - |
dc.contributor.author | Bae, SB | - |
dc.contributor.author | Park, MR | - |
dc.contributor.author | Lee, KS | - |
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Adesida, I | - |
dc.date.accessioned | 2016-03-31T12:52:34Z | - |
dc.date.available | 2016-03-31T12:52:34Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-03-20 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 2003-OAK-0000003308 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18601 | - |
dc.description.abstract | Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 mum gate-length AlGaN/GaN HEMTs, were fabricated on sapphire 2 substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm high transconductance up to 223 mS/mm. short-circuit current gain cutoff frequency of (f(T)) 67 GHz, and maximum frequency of oscillation (f(max)) of 102 GHz. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.subject | ALGAN/GAN HEMTS | - |
dc.subject | MICROWAVE | - |
dc.subject | PERFORMANCE | - |
dc.subject | GAN | - |
dc.title | High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1049/EL:20030339 | - |
dc.author.google | Youn, RH | - |
dc.author.google | Kumar, V | - |
dc.author.google | Lee, JH | - |
dc.author.google | Schwindt, R | - |
dc.author.google | Chang, WJ | - |
dc.author.google | Hong, JY | - |
dc.author.google | Jeon, CM | - |
dc.author.google | Bae, SB | - |
dc.author.google | Park, MR | - |
dc.author.google | Lee, KS | - |
dc.author.google | Lee, JL | - |
dc.author.google | Adesida, I | - |
dc.relation.volume | 39 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 566 | - |
dc.relation.lastpage | 567 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.39, no.6, pp.566 - 567 | - |
dc.identifier.wosid | 000181941000053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 567 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 566 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 39 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0037456885 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | MICROWAVE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GAN | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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