High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz
SCIE
SCOPUS
- Title
- High power 0.25 mu m gate GaNHEMTs on sapphire with power density 4.2 W/mm at 10 GHz
- Authors
- Youn, RH; Kumar, V; Lee, JH; Schwindt, R; Chang, WJ; Hong, JY; Jeon, CM; Bae, SB; Park, MR; Lee, KS; Lee, JL; Lee, JH; Adesida, I
- Date Issued
- 2003-03-20
- Publisher
- IEE-INST ELEC ENG
- Abstract
- Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 mum gate-length AlGaN/GaN HEMTs, were fabricated on sapphire 2 substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm high transconductance up to 223 mS/mm. short-circuit current gain cutoff frequency of (f(T)) 67 GHz, and maximum frequency of oscillation (f(max)) of 102 GHz.
- Keywords
- ALGAN/GAN HEMTS; MICROWAVE; PERFORMANCE; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18601
- DOI
- 10.1049/EL:20030339
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 39, no. 6, page. 566 - 567, 2003-03-20
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- There are no files associated with this item.
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