Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy
SCIE
SCOPUS
- Title
- Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy
- Authors
- Kim, JK; Jang, HW; Lee, JL
- Date Issued
- 2002-06-01
- Publisher
- AMER INST PHYSICS
- Abstract
- Changes of the work function of contact metal and the atomic composition at the vicinity of metal/GaN interface were studied in in situ annealed Ti on n-type GaN using synchrotron radiation photoemission spectroscopy. Ti layer transformed to TiN and its work function increased as annealing temperature increased. Meanwhile, the atomic composition ratio of Ga-to-N below the TiN contact increased indicating the creation of N vacancies. This provides evidence that N vacancies produced below the contact, acting as donors for electrons, play a main role in forming the Ohmic contact. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19080
- DOI
- 10.1063/1.1476085
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 91, no. 11, page. 9214 - 9217, 2002-06-01
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