Laser-MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd : YAG laser
SCIE
SCOPUS
- Title
- Laser-MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd : YAG laser
- Authors
- An, SJ; Park, WI; Yi, GC; Cho, S
- Date Issued
- 2002-04
- Publisher
- SPRINGER-VERLAG
- Abstract
- High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400-640degreesC using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04degrees and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al2O3 (0001) and SiO2/Si(100) were 3 and 18 meV, respectively.
- Keywords
- MOLECULAR-BEAM EPITAXY; DEPOSITION; SAPPHIRE; HETEROEPITAXY; TEMPERATURE; SPECTRA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19142
- DOI
- 10.1007/S00339010103
- ISSN
- 0947-8396
- Article Type
- Article
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol. 74, no. 4, page. 509 - 512, 2002-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.