Microstructures of LaNiO3 films grown on Si(001) by pulsed laser deposition
SCIE
SCOPUS
- Title
- Microstructures of LaNiO3 films grown on Si(001) by pulsed laser deposition
- Authors
- Kim, SS; Kang, TS; Je, JH
- Date Issued
- 2002-02-22
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- Conductive LaNiO3 (LNO) thin films were prepared on Si(000 by pulsed laser deposition and their microstructures were investigated using synchrotron X-ray scattering and atomic force microscopy. We observed that the surface morphology of the LNO thin films was extremely smooth with typically a 1.0-nm root-mean-squared roughness for films up to 360 nm in thickness and the film strain increased monotonically with the film thickness, suggesting that the LNO/Si(001) films be grown with a layer-like growth mode. Grown with the (001) preferred orientation, the LNO films showed a significant anisotropic structural order; the coherence length of the out-of-plane stacking order was one order of magnitude larger than that of the in-plane atomic order. (C) 2002 Elsevier Science B.V. All rights reserved.
- Keywords
- atomic force microscopy; growth mechanism; laser ablations; X-ray diffraction; THIN-FILMS; PB(ZR0.53TI0.47)O-3; CRYSTALLIZATION; ELECTRODES; LAYERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19162
- DOI
- 10.1016/S0040-6090(01)01735-7
- ISSN
- 0040-6090
- Article Type
- Article
- Citation
- THIN SOLID FILMS, vol. 405, no. 1-2, page. 117 - 121, 2002-02-22
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