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  Department of Materials Science & Engineering (신소재공학과) 1. Journal Papers

 

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Cited 12 time in webofscience Cited 11 time in scopus
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dc.contributor.authorKim, CC-
dc.contributor.authorJe, JH-
dc.contributor.authorKim, DW-
dc.contributor.authorBaik, HK-
dc.contributor.authorLee, SM-
dc.contributor.authorRuterana, P-
dc.date.accessioned2016-03-31T13:18:51Z-
dc.date.available2016-03-31T13:18:51Z-
dc.date.created2009-02-28-
dc.date.issued2001-05-22-
dc.identifier.issn0921-5107-
dc.identifier.other2001-OAK-0000001991-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/19547-
dc.description.abstractWe reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga,Pd, and Ga,Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.relation.isPartOfMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.subjectPd-
dc.subjectgallide-
dc.subjectmicrostructure-
dc.subjectinterfacial structure-
dc.subjectepitaxy-
dc.subjectGAN-
dc.subjectCONTACT-
dc.subjectPD-
dc.titleAnnealing behavior of Pd/GaN (0001) microstructure-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1016/S0921-5107(00)00761-3-
dc.author.googleKim, CC-
dc.author.googleJe, JH-
dc.author.googleKim, DW-
dc.author.googleBaik, HK-
dc.author.googleLee, SM-
dc.author.googleRuterana, P-
dc.relation.volume82-
dc.relation.issue1-3-
dc.relation.startpage105-
dc.relation.lastpage107-
dc.contributor.id10123980-
dc.relation.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameConference Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.82, no.1-3, pp.105 - 107-
dc.identifier.wosid000168618700031-
dc.date.tcdate2019-01-01-
dc.citation.endPage107-
dc.citation.number1-3-
dc.citation.startPage105-
dc.citation.titleMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.citation.volume82-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0035933098-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc10-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusCONTACT-
dc.subject.keywordPlusPD-
dc.subject.keywordAuthorPd-
dc.subject.keywordAuthorgallide-
dc.subject.keywordAuthormicrostructure-
dc.subject.keywordAuthorinterfacial structure-
dc.subject.keywordAuthorepitaxy-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
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제정호JE, JUNG HO
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