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Annealing behavior of Pd/GaN (0001) microstructure SCIE SCOPUS
- Title
- Annealing behavior of Pd/GaN (0001) microstructure
- Date Issued
- 2001-05-22
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga,Pd, and Ga,Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.
- Keywords
- Pd; gallide; microstructure; interfacial structure; epitaxy; GAN; CONTACT; PD
- ISSN
- 0921-5107
- Article Type
- Article
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 82, no. 1-3, page. 105 - 107, 2001-05-22
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Related Researcher
- 제정호JE, JUNG HO
- Dept of Materials Science & Enginrg