DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choe, SM | - |
dc.contributor.author | Ahn, JA | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2016-03-31T13:21:33Z | - |
dc.date.available | 2016-03-31T13:21:33Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2001-OAK-0000001845 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/19647 | - |
dc.description.abstract | Germanium is ion-implanted deeply into the bottom of a Si dim before excimer laser annealing begins. During the solidification step, the implanted Ges form a high thermal resistive Si1-xGex alloy, which reduces the thermal extraction rate of laser energy and the grain growth rate. Laterally larger but double-stacked grains were achieved with a higher Ge implant dose and a slower grain growth. The performance of fabricated poly-TFTs has been enhanced with a Ge 5 x 10(15)/cm(2) at 80 keV implant but deteriorated at a higher dose. We attribute this enhancement to a laterally enlarged grain and show that the performance of TFT is deteriorated more dominantly by other Ge-related factors than by surface roughening and Ge-induced defect creation. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | alloy | - |
dc.subject | excimer laser annealing (ELA) | - |
dc.subject | Si1-xGex | - |
dc.subject | thin-film transistor (TFT) | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | POLYCRYSTALLINE SILICON FILMS | - |
dc.subject | GRAIN-SIZE | - |
dc.subject | SURFACE-ROUGHNESS | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | ENLARGEMENT | - |
dc.title | Fabrication of laser-annealed poly-TFT by forming a Si1-xGex thermal barrier | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/55.910615 | - |
dc.author.google | Choe, SM | - |
dc.author.google | Ahn, JA | - |
dc.author.google | Kim, O | - |
dc.relation.volume | 22 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 121 | - |
dc.relation.lastpage | 123 | - |
dc.contributor.id | 10087230 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.22, no.3, pp.121 - 123 | - |
dc.identifier.wosid | 000167324700005 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 123 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 121 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 22 | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-0035280101 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GRAIN-SIZE | - |
dc.subject.keywordPlus | SURFACE-ROUGHNESS | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | ENLARGEMENT | - |
dc.subject.keywordAuthor | alloy | - |
dc.subject.keywordAuthor | excimer laser annealing (ELA) | - |
dc.subject.keywordAuthor | Si1-xGex | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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