Fabrication of laser-annealed poly-TFT by forming a Si1-xGex thermal barrier
SCIE
SCOPUS
- Title
- Fabrication of laser-annealed poly-TFT by forming a Si1-xGex thermal barrier
- Authors
- Choe, SM; Ahn, JA; Kim, O
- Date Issued
- 2001-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- Germanium is ion-implanted deeply into the bottom of a Si dim before excimer laser annealing begins. During the solidification step, the implanted Ges form a high thermal resistive Si1-xGex alloy, which reduces the thermal extraction rate of laser energy and the grain growth rate. Laterally larger but double-stacked grains were achieved with a higher Ge implant dose and a slower grain growth. The performance of fabricated poly-TFTs has been enhanced with a Ge 5 x 10(15)/cm(2) at 80 keV implant but deteriorated at a higher dose. We attribute this enhancement to a laterally enlarged grain and show that the performance of TFT is deteriorated more dominantly by other Ge-related factors than by surface roughening and Ge-induced defect creation.
- Keywords
- alloy; excimer laser annealing (ELA); Si1-xGex; thin-film transistor (TFT); THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON FILMS; GRAIN-SIZE; SURFACE-ROUGHNESS; CRYSTALLIZATION; ENLARGEMENT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19647
- DOI
- 10.1109/55.910615
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 22, no. 3, page. 121 - 123, 2001-03
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.