Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
SCIE
SCOPUS
- Title
- Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
- Authors
- Chon, U; Yi, GC; Jang, HM
- Date Issued
- 2001-01-29
- Publisher
- AMER INST PHYSICS
- Abstract
- Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 degreesC were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P(r)) and the coercive field (E-c) were in the range of 26-28 muC/cm(2) and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5x10(10) read/write switching cycles at a frequency of 1 MHz. (C) 2001 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19697
- DOI
- 10.1063/1.1333686
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 78, no. 5, page. 658 - 660, 2001-01-29
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.