GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone
SCIE
SCOPUS
- Title
- GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone
- Authors
- Roh, TM; Suh, Y; Kim, B; Park, W; Lee, JB; Kim, YS; Lee, GY
- Date Issued
- 1996-09-26
- Publisher
- IEE-INST ELEC ENG
- Abstract
- An MMIC power amplifier using low-high doped GaAs MESFETs (LH-MESFETs) has been developed for a CDMA/AMPS dual mode cellular telephone. It is fully integrated on one chip (2.5 x 2.9 mm(2)) including all matching circuits. For CDMA operation at frequency of 836.5 MHz, an efficiency of 25% adjacent channel leakage power of -29 dBc at 885 kHz, and -48 dBc at 1980 kHz were obtained with an output power of 27.25 dBm and V-dd = 4.7 V. In AMPS operation, 30.5 dBm output power was obtained with 27.5 dB gain and 47% efficiency. The experimental results show that the gate periphery of LH-MESFETs and size of MMIC are much smaller than in previously reported similar amplifiers using conventional MESFET technology. This MMIC power amplifier is suitable for dual mode cellular applications.
- Keywords
- gallium arsenide; MESFET; MMIC; power amplifiers; code division multiple access; cellular radio
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21482
- DOI
- 10.1049/el:19961280
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 32, no. 20, page. 1928 - 1929, 1996-09-26
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- There are no files associated with this item.
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