DC Field | Value | Language |
---|---|---|
dc.contributor.author | JEONG, YH | - |
dc.contributor.author | LEE, BH | - |
dc.contributor.author | JO, SK | - |
dc.contributor.author | JEONG, MY | - |
dc.contributor.author | SUGANO, T | - |
dc.date.accessioned | 2016-03-31T14:26:01Z | - |
dc.date.available | 2016-03-31T14:26:01Z | - |
dc.date.created | 2009-08-05 | - |
dc.date.issued | 1995-10-15 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 1995-OAK-0000009250 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/21704 | - |
dc.description.abstract | The effects of sulfide treatment on Al-P3N5/InP metal-insulator-semiconductor (MIS) devices with a photochemical vapor deposit P3N5 insulating film are investigated. The minimum density of interface trap states is as low as 2.6 x 10(10)/cm(2) . eV, and has been obtained from a sample sulfide-treated at 40 degrees C for 20 min. We have successfully fabricated depletion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) for microwave power device applications. The effective channel electron mobility is observed to be 3100 cm(2)/V . s at 300 K. The extrinsic transconductance of 5.8 mS/mm shows a broad plateau region over a range of nearly 4 V gate voltage swing. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.subject | SULFIDE TREATMENT | - |
dc.subject | PHOTO-CVD | - |
dc.subject | DEPLETION MODE INP MISFET | - |
dc.subject | POWER DEVICE | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.subject | NITRIDE | - |
dc.subject | PASSIVATION | - |
dc.subject | INTERFACE | - |
dc.subject | SURFACES | - |
dc.subject | SULFUR | - |
dc.title | EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.7567/JJAP.34.L1329 | - |
dc.author.google | JEONG, YH | - |
dc.author.google | LEE, BH | - |
dc.author.google | JO, SK | - |
dc.author.google | JEONG, MY | - |
dc.author.google | SUGANO, T | - |
dc.relation.volume | 34 | - |
dc.relation.issue | 10B | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.34, no.10B, pp.L1329 - L1331 | - |
dc.identifier.wosid | A1995TB62200005 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | L1331 | - |
dc.citation.number | 10B | - |
dc.citation.startPage | L1329 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.citation.volume | 34 | - |
dc.contributor.affiliatedAuthor | JEONG, YH | - |
dc.identifier.scopusid | 2-s2.0-0029390857 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | SULFUR | - |
dc.subject.keywordAuthor | SULFIDE TREATMENT | - |
dc.subject.keywordAuthor | PHOTO-CVD | - |
dc.subject.keywordAuthor | DEPLETION MODE INP MISFET | - |
dc.subject.keywordAuthor | POWER DEVICE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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