EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS
SCIE
SCOPUS
- Title
- EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS
- Authors
- JEONG, YH; LEE, BH; JO, SK; JEONG, MY; SUGANO, T
- Date Issued
- 1995-10-15
- Publisher
- JAPAN J APPLIED PHYSICS
- Abstract
- The effects of sulfide treatment on Al-P3N5/InP metal-insulator-semiconductor (MIS) devices with a photochemical vapor deposit P3N5 insulating film are investigated. The minimum density of interface trap states is as low as 2.6 x 10(10)/cm(2) . eV, and has been obtained from a sample sulfide-treated at 40 degrees C for 20 min. We have successfully fabricated depletion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) for microwave power device applications. The effective channel electron mobility is observed to be 3100 cm(2)/V . s at 300 K. The extrinsic transconductance of 5.8 mS/mm shows a broad plateau region over a range of nearly 4 V gate voltage swing.
- Keywords
- SULFIDE TREATMENT; PHOTO-CVD; DEPLETION MODE INP MISFET; POWER DEVICE; ELECTRICAL CHARACTERISTICS; NITRIDE; PASSIVATION; INTERFACE; SURFACES; SULFUR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21704
- DOI
- 10.7567/JJAP.34.L1329
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 34, no. 10B, page. L1329 - L1331, 1995-10-15
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