Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch(-2) density
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SCOPUS
- Title
- Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch(-2) density
- Authors
- Lee, W; Han, H; Lotnyk, A; Schubert, MA; Senz, S; Alexe, M; Hesse, D; Baik, S; Gosele, U
- Date Issued
- 2008-07
- Publisher
- NATURE PUBLISHING GROUP
- Abstract
- Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications(1-5). Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices(6-9). However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.
- Keywords
- POROUS ALUMINA MEMBRANES; THIN-FILMS; ANODIC ALUMINA; SINGLE-DOMAIN; PORE ARRAYS; FABRICATION; IMPRINT; SIZE; MICROSCOPY; CAPACITORS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22613
- DOI
- 10.1038/NNANO.2008.161
- ISSN
- 1748-3387
- Article Type
- Article
- Citation
- NATURE NANOTECHNOLOGY, vol. 3, no. 7, page. 402 - 407, 2008-07
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