MOCVD and characterization of Hf-silicate thin films using HTB and TEMAS
SCIE
SCOPUS
- Title
- MOCVD and characterization of Hf-silicate thin films using HTB and TEMAS
- Authors
- Kim, J; Yong, KJ
- Date Issued
- 2007-05-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Hafnium silicate (HfSixOy) films were deposited by metal-organic chemical vapor deposition (MOCVD) using a combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH3)(3))(4), HTB] and tetrakis-ethylmethylamino silane [Si(N(C2H5)(CH3))(4), TEMAS]. The activation energy was independent on the ratio of precursor amounts in the surface reaction regime. The grown films showed Hf-rich characteristics and the impurity concentrations were less than 1 at.% (below detection limits). Hafnium silicate films were amorphous up to 700 degrees C annealing. Hf/(Hf+Si) composition ratio and dielectric constant (k) of the Hf-silicate films decreased by increasing the growth temperature above 270 degrees C. (C) 2007 Elsevier B.V. All rights reserved.
- Keywords
- thin film transistors; chemical vapor deposition; silicates; X-ray diffraction; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; GATE-DIELECTRIC APPLICATIONS; THERMAL-STABILITY; ZIRCONIUM-OXIDE; HAFNIUM OXIDE; PRECURSORS; SI(100); STACKS; OZONE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23412
- DOI
- 10.1016/j.jnoncrysol.2006.12.030
- ISSN
- 0022-3093
- Article Type
- Article
- Citation
- JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 353, no. 11-12, page. 1172 - 1176, 2007-05-01
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