Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEAS

Abstract

Zirconium silicate (ZrxSi1-xO2) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200-300 degrees C was used to deposit films with uniform thickness. The grown films showed the Zr-rich composition, which is thought to induce the Zr-silicide formation at the interface of the silicate and Si substrate. The film composition and chemical binding states were investigated by XPS depth profiling measurements.