Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane)
SCIE
SCOPUS
- Title
- Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane)
- Authors
- Kim, J; Yong, K
- Date Issued
- 2007-04
- Publisher
- SPRINGER
- Abstract
- Hafnium silicate (HfSixOy) films were deposited by metal-organic chemical vapor deposition (MOCVD) using hafnium tetra-tert-butoxide [HTB, Hf(OC(CH3)(3))(4)] and tetrakis-diethylamino silane [TDEAS, Si(N(C2H5)(2))(4)]. The grown Hf-silicate films showed Hf-rich composition and impurity concentrations less than 1 atomic % ( below detection limits). Uniformly deposited films with good step-coverage were obtained on hole-patterned SiO2 substrates. Hafnium silicate films had stable amorphous crystalline structure up to 800 degrees C annealing and above 900 degrees C, a tetragonal HfO2 crystal phase was observed. Dielectric constant (k) of the Hf-silicate films was about 15 and flat band voltage (V-fb) and hysteresis were very low.
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; GATE-DIELECTRIC APPLICATIONS; THERMAL-STABILITY; HFO2; PRECURSORS; OXIDE; STACKS; OZONE; ALD
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23623
- DOI
- 10.1007/s10854-006-9050-2
- ISSN
- 0957-4522
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 18, no. 4, page. 391 - 395, 2007-04
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