Direct bonding of silicon carbide wafers with a regular relief at the interface
SCIE
SCOPUS
- Title
- Direct bonding of silicon carbide wafers with a regular relief at the interface
- Authors
- Grekhov, IV; Kostina, LS; Argunova, TS; Belyakova, EI; Je, JH; Ivanov, PA; Samsonova, TP
- Date Issued
- 2006-05
- Publisher
- MAIK NAUKA/INTERPERIODICA/SPRINGER
- Abstract
- The direct bonding of two oxide-free 6H-SiC(0001) silicon carbide single crystal wafers, one smooth and another bearing an artificial microscopic relief, has been studied. According to the X-ray topography data, the bonded surface fraction reaches 85% of the total area. The pattern of stress distribution at the interface is aperiodic, which is indicative of an inhomogeneous microroughness of the surface of bonded wafers.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24005
- DOI
- 10.1134/S1063785006050245
- ISSN
- 1063-7850
- Article Type
- Article
- Citation
- TECHNICAL PHYSICS LETTERS, vol. 32, no. 5, page. 453 - 455, 2006-05
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- There are no files associated with this item.
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