Removal of aspect-ratio-dependent etching by low-angle forward reflected neutral-beam etching
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- Title
- Removal of aspect-ratio-dependent etching by low-angle forward reflected neutral-beam etching
- Authors
- Lee, DH; Park, BJ; Yeom, GY; Kim, SJ; Lee, JK; Baek, KH; Kang, CJ
- Date Issued
- 2005-04
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- In this study, the effect of using a neutral beam formed by low-angle forward reflection of a reactive ion beam on aspect-ratio-dependent etching (ABDE) has been investigated. When a SF6 inductively coupled plasma and SF6 ion beam etching are used to etch poly-Si, ARDE is observed, and the etching of poly-Si on SiO2 shows a higher ABDE effect than the etching of poly-Si on Si. However, by using neutral beam etching with neutral beam directionality higher than 70 %, ARDE during poly-Si etching by SF6 can be effectively removed, regardless of the sample conditions. The mechanism for the removal of ARDE via a directional neutral beam has been demonstrated through a computer simulation of different nanoscale features by using the two-dimensional XOOPIC code and the TRIM code.
- Keywords
- neutral beam etching; RIE-lag; low-angle surface reflection; DAMAGE; SIO2; PLASMAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24643
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 46, no. 4, page. 867 - 871, 2005-04
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