Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct Bonding

Abstract

A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si(1-x)Ge(x) wafers cut from Czochralski-grown crystals, is suggested. Si(1-x)Ge(x) layers no larger than 10 mu m thick in SiGe/SiO(2)/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si(1-x)Ge(x) layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250 degrees C are not accompanied by degradation of structural and electrical characteristics of Si(1-x)Ge(x) layers.