Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators
SCIE
SCOPUS
- Title
- Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators
- Authors
- Jang, K; Park, H; Jung, S; Van Duy, N; Kim, Y; Cho, J; Choi, H; Kwon, T; Lee, W; Gong, D; Park, S; Yi, J; Kim, D; Kim, H
- Date Issued
- 2010-03-01
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- Al-doped ZnO (AZO) thin films have been prepared on the c-Si oriented direction of (100) and glass substrates, by radio frequency magnetron sputtering from ZnO-2 wt.% Al2O3 ceramic targets. The effects of the working pressure on the optical and electrical properties of the films have been studied. The optical properties, measured by the ultraviolet-visible system, show that the transmittance and optical bandgap energy are influenced by the working pressure. The Hall resistivity, mobility, and carrier concentration were obtained by a Hall measurement system and these parameters were also influenced by the working pressure. The AZO thin-film transistors (TFTs) were fabricated on highly doped c-Si substrates. The TFT structures were made up AZO as the active layer and SiOxNy/SiNx/SiOx as the gate layer with 20 nm and 35 nm thickness, respectively. The ultra-thin TFTs had an on/off current ratio of 10(4) and a field-effect mobility of 0.17 cm(2)/V.s. These results show that it is possible to fabricate an AZO TFT that can be operated with an ultra-thin gate dielectric. (C) 2009 Elsevier B.V. All rights reserved.
- Keywords
- Al-doped zinc oxide; Radio-frequency magnetron sputtering; Hall effect measurements; UV/VIS spectroscopy; Thin film transistors; ZINC-OXIDE; ROOM-TEMPERATURE; SUBSTRATE-TEMPERATURE; DEPOSITION; PRESSURE; LAYER; TFTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/26310
- DOI
- 10.1016/J.TSF.2009.08.036
- ISSN
- 0040-6090
- Article Type
- Article
- Citation
- THIN SOLID FILMS, vol. 518, no. 10, page. 2808 - 2811, 2010-03-01
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