Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs
SCIE
SCOPUS
- Title
- Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs
- Authors
- Lee, NH; Choi, HW; Kang, H; Kang, B
- Date Issued
- 2009-11
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- An experimental method of extracting the effective channel length L-eff from measured gate tunneling current (I-g) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I-gsd) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I-gc) was obtained by subtracting I-gsd from I-g. L-eff was calculated using a linear extrapolation of the I-gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L-eff which does not require any additional assumptions and parameter extraction.
- Keywords
- Effective channel length; gate-source/drain overlap length; gate tunneling current; MOSFET; SHIFT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/27615
- DOI
- 10.1109/LED.2009.203
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 11, page. 1191 - 1193, 2009-11
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- There are no files associated with this item.
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