DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JL | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Yoo, HM | - |
dc.date.accessioned | 2016-04-01T08:31:26Z | - |
dc.date.available | 2016-04-01T08:31:26Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2000-02-03 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.other | 2000-OAK-0000018757 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28167 | - |
dc.description.abstract | A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power density), 37% power-added efficiency. and a third-order intermodulation distortion Im el of -30.7dBc under single-voltage operation with a 3.3V drain voltage and 1.6GHz frequency. The power density is the highest among those reported for poser devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between the gate and the InGaAs channel. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.subject | TRANSISTOR | - |
dc.title | 3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1049/el:20000228 | - |
dc.author.google | Lee, JL | - |
dc.author.google | Kim, JK | - |
dc.author.google | Choi, KJ | - |
dc.author.google | Yoo, HM | - |
dc.relation.volume | 36 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 262 | - |
dc.relation.lastpage | 264 | - |
dc.contributor.id | 10100864 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.36, no.3, pp.262 - 264 | - |
dc.identifier.wosid | 000085671400046 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 264 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 262 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 36 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-0034598666 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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