3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications
SCIE
SCOPUS
- Title
- 3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications
- Authors
- Lee, JL; Kim, JK; Choi, KJ; Yoo, HM
- Date Issued
- 2000-02-03
- Publisher
- IEE-INST ELEC ENG
- Abstract
- A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power density), 37% power-added efficiency. and a third-order intermodulation distortion Im el of -30.7dBc under single-voltage operation with a 3.3V drain voltage and 1.6GHz frequency. The power density is the highest among those reported for poser devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between the gate and the InGaAs channel.
- Keywords
- TRANSISTOR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28167
- DOI
- 10.1049/el:20000228
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 36, no. 3, page. 262 - 264, 2000-02-03
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