DC Field | Value | Language |
---|---|---|
dc.contributor.author | COCKERILL, TM | - |
dc.contributor.author | FORBES, DV | - |
dc.contributor.author | HAN, H | - |
dc.contributor.author | COLEMAN, JJ | - |
dc.date.accessioned | 2016-04-01T08:31:39Z | - |
dc.date.available | 2016-04-01T08:31:39Z | - |
dc.date.created | 2009-10-08 | - |
dc.date.issued | 1993-04 | - |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.other | 1993-OAK-0000018746 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28175 | - |
dc.description.abstract | Selective-area growth and regrowth by conventional atmospheric pressure MOCVD has been used to fabricate a monolithically integrated strained-layer InGaAs-GaAs-AlGaAs quantum-well laser and waveguide. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.title | MONOLITHIC INTEGRATION OF A STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL LASER WITH A PASSIVE WAVE-GUIDE BY SELECTIVE-AREA MOCVD | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/68.212695 | - |
dc.author.google | COCKERILL, TM | - |
dc.author.google | FORBES, DV | - |
dc.author.google | HAN, H | - |
dc.author.google | COLEMAN, JJ | - |
dc.relation.volume | 5 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 448 | - |
dc.relation.lastpage | 450 | - |
dc.contributor.id | 10056174 | - |
dc.relation.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.5, no.4, pp.448 - 450 | - |
dc.identifier.wosid | A1993KZ81700029 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 450 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 448 | - |
dc.citation.title | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.volume | 5 | - |
dc.contributor.affiliatedAuthor | HAN, H | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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