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dc.contributor.authorCOCKERILL, TM-
dc.contributor.authorFORBES, DV-
dc.contributor.authorHAN, H-
dc.contributor.authorCOLEMAN, JJ-
dc.date.accessioned2016-04-01T08:31:39Z-
dc.date.available2016-04-01T08:31:39Z-
dc.date.created2009-10-08-
dc.date.issued1993-04-
dc.identifier.issn1041-1135-
dc.identifier.other1993-OAK-0000018746-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/28175-
dc.description.abstractSelective-area growth and regrowth by conventional atmospheric pressure MOCVD has been used to fabricate a monolithically integrated strained-layer InGaAs-GaAs-AlGaAs quantum-well laser and waveguide. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.relation.isPartOfIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.titleMONOLITHIC INTEGRATION OF A STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL LASER WITH A PASSIVE WAVE-GUIDE BY SELECTIVE-AREA MOCVD-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/68.212695-
dc.author.googleCOCKERILL, TM-
dc.author.googleFORBES, DV-
dc.author.googleHAN, H-
dc.author.googleCOLEMAN, JJ-
dc.relation.volume5-
dc.relation.issue4-
dc.relation.startpage448-
dc.relation.lastpage450-
dc.contributor.id10056174-
dc.relation.journalIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE PHOTONICS TECHNOLOGY LETTERS, v.5, no.4, pp.448 - 450-
dc.identifier.wosidA1993KZ81700029-
dc.date.tcdate2019-02-01-
dc.citation.endPage450-
dc.citation.number4-
dc.citation.startPage448-
dc.citation.titleIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.citation.volume5-
dc.contributor.affiliatedAuthorHAN, H-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc4-
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-

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한해욱HAN, HAEWOOK
Dept of Electrical Enginrg
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