MONOLITHIC INTEGRATION OF A STRAINED-LAYER INGAAS-GAAS-ALGAAS QUANTUM-WELL LASER WITH A PASSIVE WAVE-GUIDE BY SELECTIVE-AREA MOCVD

Abstract

Selective-area growth and regrowth by conventional atmospheric pressure MOCVD has been used to fabricate a monolithically integrated strained-layer InGaAs-GaAs-AlGaAs quantum-well laser and waveguide. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region.