Electrical detection of VEGFs for cancer diagnoses using anti-vascular endotherial growth factor aptamer-modified Si nanowire FETs
SCIE
SCOPUS
- Title
- Electrical detection of VEGFs for cancer diagnoses using anti-vascular endotherial growth factor aptamer-modified Si nanowire FETs
- Authors
- Lee, HS; Kim, KS; Kim, CJ; Hahn, SK; Jo, MH
- Date Issued
- 2009-02-15
- Publisher
- ELSEVIER ADVANCED TECHNOLOGY
- Abstract
- We report the real-time, label-free and electrical detection of vascular endotherial growth factor (VEGF) for cancer diagnosis using anti-VEGF aptamer-modified Si nanowire field-effect transistors (SiNW-FETs). Specifically, the high quality single-crystalline SiNWs of both n-type and p-type characters were surface modified with the covalent immobilization of anti-VEGF aptamers, and they were turned into SiNW-FET biosensors for the VEGF detection. We show that the VEGF molecules consistently act on the gate dielectrics of both n-type and p-type SiNW-FETs as electrically positive point-charges; their recognition to anti-VEGF aptamers depletes (accumulates) the charge carriers in the p-type (n-type) SiNW-FETs and thus decreases (increases) the detection currents. The detection limit for VEGFs in this study was determined as 1.04 nM and 104 pM for the cases of n-type and p-type SiNW-FETs, respectively. (C) 2008 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28483
- DOI
- 10.1016/J.BIOS.2008.08.036
- ISSN
- 0956-5663
- Article Type
- Article
- Citation
- BIOSENSORS & BIOELECTRONICS, vol. 24, no. 6, page. 1801 - 1805, 2009-02-15
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