DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, IS | - |
dc.contributor.author | Choi, WH | - |
dc.contributor.author | Kwon, HM | - |
dc.contributor.author | Na, MK | - |
dc.contributor.author | Zhang, YY | - |
dc.contributor.author | Kim, YG | - |
dc.contributor.author | Wang, JS | - |
dc.contributor.author | Kang, CY | - |
dc.contributor.author | Bersuker, G | - |
dc.contributor.author | Lee, BH | - |
dc.contributor.author | Jeong, YH | - |
dc.contributor.author | Lee, HD | - |
dc.contributor.author | Jammy, R | - |
dc.date.accessioned | 2016-04-01T08:47:03Z | - |
dc.date.available | 2016-04-01T08:47:03Z | - |
dc.date.created | 2009-07-31 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2009-OAK-0000017098 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28758 | - |
dc.description.abstract | Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2, dielectric breakdown behaviors of La-incorporated WON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of T-BD an stress-induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | BTI | - |
dc.subject | high-k dielectric | - |
dc.subject | Lanthanide Oxide (La2O3) | - |
dc.subject | stress-induced leakage current (SILC) | - |
dc.subject | time-dependent dielectric breakdown (TDDB) | - |
dc.subject | HIGH-K | - |
dc.title | Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LED.2008.201 | - |
dc.author.google | Han, IS | - |
dc.author.google | Choi, WH | - |
dc.author.google | Kwon, HM | - |
dc.author.google | Na, MK | - |
dc.author.google | Zhang, YY | - |
dc.author.google | Kim, YG | - |
dc.author.google | Wang, JS | - |
dc.author.google | Kang, CY | - |
dc.author.google | Bersuker, G | - |
dc.author.google | Lee, BH | - |
dc.author.google | Jeong, YH | - |
dc.author.google | Lee, HD | - |
dc.author.google | Jammy, R | - |
dc.relation.volume | 30 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 298 | - |
dc.relation.lastpage | 301 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.30, no.3, pp.298 - 301 | - |
dc.identifier.wosid | 000263920400030 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 301 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 298 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 30 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-62549144365 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | BTI | - |
dc.subject.keywordAuthor | high-k dielectric | - |
dc.subject.keywordAuthor | Lanthanide Oxide (La2O3) | - |
dc.subject.keywordAuthor | stress-induced leakage current (SILC) | - |
dc.subject.keywordAuthor | time-dependent dielectric breakdown (TDDB) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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