Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs
SCIE
SCOPUS
- Title
- Time-Dependent Dielectric Breakdown of La2O3-Doped High-k/Metal Gate Stacked NMOSFETs
- Authors
- Han, IS; Choi, WH; Kwon, HM; Na, MK; Zhang, YY; Kim, YG; Wang, JS; Kang, CY; Bersuker, G; Lee, BH; Jeong, YH; Lee, HD; Jammy, R
- Date Issued
- 2009-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2, dielectric breakdown behaviors of La-incorporated WON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of T-BD an stress-induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure.
- Keywords
- BTI; high-k dielectric; Lanthanide Oxide (La2O3); stress-induced leakage current (SILC); time-dependent dielectric breakdown (TDDB); HIGH-K
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28758
- DOI
- 10.1109/LED.2008.201
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 3, page. 298 - 301, 2009-03
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- There are no files associated with this item.
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