Reduction of Transient Far-End Crosstalk Voltage and Jitter in DIMM Connectors for DRAM Interface
SCIE
SCOPUS
- Title
- Reduction of Transient Far-End Crosstalk Voltage and Jitter in DIMM Connectors for DRAM Interface
- Authors
- Lee, K; Jung, HK; Sim, JY; Park, HJ
- Date Issued
- 2009-01
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- The transient far-end crosstalk voltage and the crosstalk-induced jitter or dual in-line memory module (DIMM) connectors are reduced by about 80% by increasing the mutual capacitance between DIMM connector plus with the additional interdigitated-comb-shaped metal-stub patterns on the mother-board. It was confirmed by the far-end crosstalk voltage waveform measurements using TDR and the eye diagram measurements at the data rates of 15 Mbps, 100 Mbps, and 3 Gbps. This reduction technique can be applied to the connectors where the inductive coupling ratio is larger than the capacitive coupling ratio.
- Keywords
- Crosstalk; crosstalk-induced jitter (CIJ); dual in-line memory module (DIMM) connector; MICROSTRIP LINES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29118
- DOI
- 10.1109/LMWC.2008.2008536
- ISSN
- 1531-1309
- Article Type
- Article
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, vol. 19, no. 1, page. 15 - 17, 2009-01
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- There are no files associated with this item.
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