DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, BT | - |
dc.contributor.author | Shin, JY | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Kim, JH | - |
dc.contributor.author | Han, SY | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-04-01T09:16:30Z | - |
dc.date.available | 2016-04-01T09:16:30Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-06 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.other | 2003-OAK-0000010437 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/29778 | - |
dc.description.abstract | Interfacial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/Al/4H-SiC and TiN/Al/4H-SiC were studied before and after high-temperature annealing. It was observed that surface smoothness of the samples was not significantly affected by the heat treatment at up to 900degreesC, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/Al/SiC interface showed that Al layer reacted with the SiC substrate at 900degreesC and formed an Al-Si-(Ti)-C compound at the metal/SiC interface, which is similar to the case of the Al/SiC interface. The I-V measurement showed reasonable ohmic properties for the Ti/Al films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the Al layer from the potential oxidation and evaporation problem, while maintaining proper contact properties. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | MINERALS METALS MATERIALS SOC | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.subject | ohmic contact | - |
dc.subject | p-SiC | - |
dc.subject | Ti/Al/SiC | - |
dc.subject | TiN/Al/SiC | - |
dc.subject | SILICON-CARBIDE | - |
dc.subject | ALUMINUM | - |
dc.title | Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1007/s11664-003-0133-z | - |
dc.author.google | Lee, BT | - |
dc.author.google | Shin, JY | - |
dc.author.google | Kim, SH | - |
dc.author.google | Kim, JH | - |
dc.author.google | Han, SY | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 32 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 501 | - |
dc.relation.lastpage | 504 | - |
dc.contributor.id | 10077433 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.32, no.6, pp.501 - 504 | - |
dc.identifier.wosid | 000183490500006 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 504 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 501 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Kim, SH | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0038160338 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 4 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | ohmic contact | - |
dc.subject.keywordAuthor | p-SiC | - |
dc.subject.keywordAuthor | Ti/Al/SiC | - |
dc.subject.keywordAuthor | TiN/Al/SiC | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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