Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC
SCIE
SCOPUS
- Title
- Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC
- Authors
- Lee, BT; Shin, JY; Kim, SH; Kim, JH; Han, SY; Lee, JL
- Date Issued
- 2003-06
- Publisher
- MINERALS METALS MATERIALS SOC
- Abstract
- Interfacial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/Al/4H-SiC and TiN/Al/4H-SiC were studied before and after high-temperature annealing. It was observed that surface smoothness of the samples was not significantly affected by the heat treatment at up to 900degreesC, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/Al/SiC interface showed that Al layer reacted with the SiC substrate at 900degreesC and formed an Al-Si-(Ti)-C compound at the metal/SiC interface, which is similar to the case of the Al/SiC interface. The I-V measurement showed reasonable ohmic properties for the Ti/Al films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the Al layer from the potential oxidation and evaporation problem, while maintaining proper contact properties.
- Keywords
- ohmic contact; p-SiC; Ti/Al/SiC; TiN/Al/SiC; SILICON-CARBIDE; ALUMINUM
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29778
- DOI
- 10.1007/s11664-003-0133-z
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 32, no. 6, page. 501 - 504, 2003-06
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