Organic n-channel thin-film transistors based on dichlorinated naphthalene diimides
SCIE
SCOPUS
- Title
- Organic n-channel thin-film transistors based on dichlorinated naphthalene diimides
- Authors
- Stolte, M.; Suraru, S.-L.; Würthner, F.; Ohb, J.H.; Bao, Z.; Brill, J.; J. Brill; M. Könemann; Qu, J.; Zschieschang, U.; H. Klauck
- Date Issued
- 2010-08
- Publisher
- SPIE
- Abstract
- Five core-dichlorinated naphthalene diimides (NDIs) bearing several fluoroalkyl-substituents at the imide nitrogens were synthesized, characterized and employed in organic n-channel thin-film transistors with a vacuum-deposited semiconductor layer on 110 nm thick SiO2 (100 nm)/AlOx (8 nm)/SAM (1.7 nm) and 5.7 nm thick AlOx (3.6 nm)/SAM (2.1 nm) gate dielectrics. The electron mobility of the thin-film transistors under ambient conditions is as large as 1.3 cm(2)/Vs on the thicker gate dielectric. On the thinner gate dielectric the mobility is lower (0.4 cm(2)/Vs) but enables switching at gate-source voltages of only 3V. Such outstanding performance together with the feasible synthetic access to these compounds make these semiconductors highly promising for low-cost, large-area, and flexible electronics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35937
- DOI
- 10.1117/12.859829
- ISSN
- 0277-786X
- Article Type
- Article
- Citation
- Proceedings of SPIE-The International Society for Optical Engineering, vol. 7778, page. 777804, 2010-08
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