Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs
SCIE
SCOPUS
- Title
- Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs
- Authors
- Ji Hoon Seo; Gang Jun Kim; Dong hee Son; Lee, NH; Yong ha Kang; Kang, B
- Date Issued
- 2016-08
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Abstract
- We propose a method to predict the length dependency of the magnitude of degradation caused by negative bias temperature instability (NBTI) stress applied to a p-MOSFET. Threshold voltage degradation ΔV th varied according to the drain bias V d, during the measurement of drain current I d. The depletion length L dep into the channel was calculated based on a particular V d value and the channel doping concentration. L dep was used to extract the channel edge region length L edge, then the center channel region length L cen was obtained by subtracting L edge from the gate length L gate. We proposed an equation that uses L dep, L cen, L edge and degree of ΔV th variation to calculate ΔV th according to L gate while the p-MOSFET is under NBTI stress. Equation estimates of ΔV th at different L gate were similar to measurements.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37176
- DOI
- 10.7567/JJAP.55.08PD03
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 8, 2016-08
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