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dc.contributor.authorK.H. Kim-
dc.contributor.authorC.M. Jeon-
dc.contributor.authorS.H. Oh-
dc.contributor.authorC.G. Park-
dc.contributor.authorJ.H. Lee-
dc.contributor.authorK.S. Lee-
dc.contributor.authorJong-Lam Lee-
dc.date.accessioned2018-01-09T08:57:35Z-
dc.date.available2018-01-09T08:57:35Z-
dc.date.created2009-03-26-
dc.date.issued2002-12-
dc.identifier.issn1862-6351-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/40797-
dc.description.abstractThe Au/Ni/Al/Ti/Ta ohmic contact (7.5 × 10-7 Ωcm2) on the AlGaN/GaN heterostructure was demonstrated through 700 °C annealing for 1 min. The nitride phases were identified as the TaN/TiN for Au/Ni/Al/Ti/Ta and TiN for Au/Ni/Al/Ti. The strong formation of interfacial nitrides appears to be responsible for the good ohmic contact behavior in the Au/Ni/Al/Ti/Ta metal scheme. The contact resistance was found to depend on the thickness of the nitride phases. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageEnglish-
dc.publisherWILEY - VCH VERLAG-
dc.relation.isPartOfPHYSICA STATUS SOLIDI (C)-
dc.titleMICROSTRUCTURAL ANALYSIS OF AU/NI/AL/TI/TA OHMIC CONTACT ON ALGAN/GAN HETEROSTRUCTURE-
dc.typeArticle-
dc.identifier.doi10.1002/pssc.200390029-
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI (C), v.0, no.1, pp.223 - 226-
dc.identifier.wosid000189455300046-
dc.citation.endPage226-
dc.citation.number1-
dc.citation.startPage223-
dc.citation.titlePHYSICA STATUS SOLIDI (C)-
dc.citation.volume0-
dc.contributor.affiliatedAuthorC.G. Park-
dc.contributor.affiliatedAuthorJong-Lam Lee-
dc.identifier.scopusid2-s2.0-21844455307-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeProceedings Paper-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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