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MICROSTRUCTURAL ANALYSIS OF AU/NI/AL/TI/TA OHMIC CONTACT ON ALGAN/GAN HETEROSTRUCTURE SCIE SCOPUS
- Title
- MICROSTRUCTURAL ANALYSIS OF AU/NI/AL/TI/TA OHMIC CONTACT ON ALGAN/GAN HETEROSTRUCTURE
- Date Issued
- 2002-12
- Publisher
- WILEY - VCH VERLAG
- Abstract
- The Au/Ni/Al/Ti/Ta ohmic contact (7.5 × 10-7 Ωcm2) on the AlGaN/GaN heterostructure was demonstrated through 700 °C annealing for 1 min. The nitride phases were identified as the TaN/TiN for Au/Ni/Al/Ti/Ta and TiN for Au/Ni/Al/Ti. The strong formation of interfacial nitrides appears to be responsible for the good ohmic contact behavior in the Au/Ni/Al/Ti/Ta metal scheme. The contact resistance was found to depend on the thickness of the nitride phases. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- ISSN
- 1862-6351
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI (C), no. 1, page. 223 - 226, 2002-12
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg