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Mechanism of Hump Phenomenon in the I-V Characteristics of Amorphous in-Ga-Zn-O Thin Film Transistors Under Positive Bias and Illumination Stress
- Title
- Mechanism of Hump Phenomenon in the I-V Characteristics of Amorphous in-Ga-Zn-O Thin Film Transistors Under Positive Bias and Illumination Stress
- Authors
- 김오현
- Date Issued
- 2016-05-30
- Publisher
- ECS
- Article Type
- Conference
- Citation
- ECS meeting, 2016-05-30
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Related Researcher
- 김오현KIM, OHYUN
- Dept of Electrical Enginrg