DC Field | Value | Language |
---|---|---|
dc.contributor.author | Misha, SH | - |
dc.contributor.author | Tamanna, N | - |
dc.contributor.author | Prakash, Amit | - |
dc.contributor.author | Song, J | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Cha, E | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2018-06-07T01:02:35Z | - |
dc.date.available | 2018-06-07T01:02:35Z | - |
dc.date.created | 2015-08-11 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/50130 | - |
dc.description.abstract | To implement a cross-point memory array successfully, it is highly required to develop nonlinear selector devices. Insulator–metal transition (IMT) devices are promising candidates for selector applications. Although IMT characteristics of SmNiO3 with a high transition temperature of 130 °C have already been reported, the film deposition conditions following high-pressure oxygen annealing at high temperatures are not practical for high-density memory applications. In this report, we propose a simple electrical method to form a localized IMT SmNiO3 region in a sputter-deposited SmNiOx film. The nanoscale IMT device formed by the electro thermal effect shows promising selector characteristics such as switching uniformity, switching endurance (>105 cycles), and high temperature stability. The feasibility of good selector characteristics is also investigated by serially connecting the selector device (SmNiO3 IMT) to a Ta/Ta2O5/Pt resistive random access memory (ReRAM) device. | - |
dc.language | English | - |
dc.publisher | Institute of Physics (IOP) science | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.title | Comprehensive analysis of electro thermally driven nanoscale insulator–metal transition SmNiO3-based selector for cross-point memory array | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.54.04DD09 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.4, pp.04DD09 | - |
dc.identifier.wosid | 000357694000041 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 04DD09 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 54 | - |
dc.contributor.affiliatedAuthor | Prakash, Amit | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84926313384 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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