Comprehensive analysis of electro thermally driven nanoscale insulator–metal transition SmNiO3-based selector for cross-point memory array
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SCOPUS
- Title
- Comprehensive analysis of electro thermally driven nanoscale insulator–metal transition SmNiO3-based selector for cross-point memory array
- Authors
- Misha, SH; Tamanna, N; Prakash, Amit; Song, J; Lee, D; Cha, E; Hwang, H
- Date Issued
- 2015-04
- Publisher
- Institute of Physics (IOP) science
- Abstract
- To implement a cross-point memory array successfully, it is highly required to develop nonlinear selector devices. Insulator–metal transition (IMT) devices are promising candidates for selector applications. Although IMT characteristics of SmNiO3 with a high transition temperature of 130 °C have already been reported, the film deposition conditions following high-pressure oxygen annealing at high temperatures are not practical for high-density memory applications. In this report, we propose a simple electrical method to form a localized IMT SmNiO3 region in a sputter-deposited SmNiOx film. The nanoscale IMT device formed by the electro thermal effect shows promising selector characteristics such as switching uniformity, switching endurance (>105 cycles), and high temperature stability. The feasibility of good selector characteristics is also investigated by serially connecting the selector device (SmNiO3 IMT) to a Ta/Ta2O5/Pt resistive random access memory (ReRAM) device.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50130
- DOI
- 10.7567/JJAP.54.04DD09
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 04DD09, 2015-04
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